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July 26, 2024: GaN HEMT Transistor Compact Modeling based on Pre-RF Pulse I-V Measurements
This approach provides a more realistic representation of thermal and trapping conditions under high-frequency load pull scenarios. Utilizing a VNA-based load-pull measurement system, our innovative technique not only reduces the time required for compact model development but also ensures reliable performance. Check out our whitepaper discover the details of our new technique and the promising […]