Gallium Nitride (GaN) HEMT transistors are known for their high cut-off frequency and impressive power density. However, they can suffer from performance degradation due to trapping phenomena. Traditional I-V (current voltage) characterization methods, such as single- and double-pulse techniques, can fall short of capturing the complexities of real-world operating conditions, particularly thermal effects and trap phenomena. This limitation poses significant challenges in accurately modeling these transistors for RF applications.
To help overcome these challenges our AMCAD Engineering team, now a part of the SIMULIA brand of Dassault Systèmes, has developed a new methodology that combines pre-RF pulses with DC pulses.
This approach provides a more realistic representation of thermal and trapping conditions under high-frequency load pull scenarios. Utilizing a VNA-based load-pull measurement system, our innovative technique not only reduces the time required for compact model development but also ensures reliable performance.
Check out our whitepaper discover the details of our new technique and the promising results that can be of benefit your product development processes.