MT930M2B is a nonlinear modeling tool for LDMOS transistors. It will reuse the extrinsic elements determined by the MT930M1 linear module in order to de-embed the measurement to the transistor’ intrinsic reference planes.

Pulsed S parameters will be used to extract different LDMOS nonlinear capacitances models through built-in AMCAD’s or user-defined equations. Pulsed IV measurements will be used to extract specific LDMOS output current source parameters using AMCAD’s or user-defined equations. Export functionalities and specific templates are then used to upload the model into commercial simulators and include thermal effects. Finally, the model is refined against VNA based load pull measurements for better approximation of the model in the desired application.

AN : Transistor Compact Modeling