AM3200 Main Features:

  • Unbreakable pulsers (thermal, SOA and DUT breakdown protections)
  • Included optimized power supplies allow unrivaled fast IV plotting
  • Pulsed or DC operation, pulse width down to 200ns
  • Long pulse time domain measurement capabilities
  • Internal or external synchronization
  • Interlock function disables pulsers within 1µs
  • High System flexibility (later upgrade possible):
    • 1 gate and 1 drain pulser
    • 2 gate pulsers or 2 drain pulsers
    • 3 and 4 pulser systems

 

System description

This Pulse IV system is used to bias transistors in quasi-isothermal conditions, it enables accurate compact modeling activities.

Pulser Safe Operating Area

Emergency stop when the operating point exceeds design limits: Ip, Irms, Idc (pulsed, RMS and DC current), Vdc (pulser input voltage, drain pulser only), Pmax (DC power), Fmax (switching frequency), Temperature.

Current Breaker

Programmable thresholds: pulse current and power, quiescent current and power, transient current

Measurement Sampling Time

Fully programmable, 20ns resolution, External synchronization Mtrig & Rfpulse

Modularity

The standard system works with two pulse generators and one control box. External signals permit to combine and synchronize several control boxes (4, 6, 8…).


Specifications

AM3211 Bipolar Probe +/-25V +/-1A

The AM3211 is a low noise floating pulse generator dedicated to bias the transistor gate, optimized to drive quickly and safely all the transistors (RF Devices, MOSFET).

AM3221 Probe +250V +30A

The AM3221 probe is a power probe dedicated to bias the transistor drain, optimized for high power pulsed measurements.

AM3211

AM3211 Bipolar Probe +/-25V +/-1A

The AM3211 is a low noise floating pulse generator dedicated to bias the transistor gate, optimized to drive quickly and safely all the transistors (RF Devices, MOSFET).

AM3221

AM3221 Probe +250V +30A

The AM3221 probe is a power probe dedicated to bias the transistor drain, optimized for high power pulsed measurements.