Main Features:

  • Unbreakable pulsers (thermal, SOA and DUT breakdown protections)
  • Included optimized power supplies allow unrivaled fast IV plotting
  • Pulsed or DC operation, pulse width down to 200ns
  • Long pulse time domain measurement capabilities
  • Internal or external synchronization
  • Interlock function disables pulsers within 1µs
  • High System flexibility (later upgrade possible):
    • 1 gate and 1 drain pulser
    • 2 gate pulsers or 2 drain pulsers
    • 3 and 4 pulser systems

Specifications

PURPOSE GATE
OPERATING RANGE
Switched voltage levels 2
Voltage ±25V
Pulsed current ±1A
DC& RMS Current 300mA
DC power / Pulse Power 3W / 10W Source or Sink
SOURCE PERFORMANCE
Voltage setting resolution 16bit
0,7mV
Output impedance I ≤ 0.1mA: 204Ω / I > 0.1mA: 14.5Ω
PULSE TIMING  

Rise Time (10% - 90%)
Fall Time (10% - 90%)

33ns ( typ. value)
32ns ( typ. value)
speed mode: fast, no load, 5V step

Pulse Timing Pulse width from 200ns to DC (Within Power limits)
Fmax 500kHz
MEASUREMENT PERFORMANCE  
V range 25V
I range 1A/10mA/0,1mA
V & I ADC resolution 16bit
Noise free resolution (average filter 128 samples, at 0 voltage and current)

0,5mV

30μA/3μA/0,3μA

Settling time 300ns
Bandwidth (greatest range) 10MHz
Output connector D-SUB15

 

AM3211 Bipolar Probe +/-25V +/-1A

The AM3211 is a low noise floating pulse generator dedicated to bias the transistor gate, optimized to drive quickly and safely all the transistors (RF Devices, MOSFET).

PURPOSE DRAIN
OPERATING RANGE
Switched voltage levels 2
Voltage ±250V
Pulsed current ±30A
DC& RMS Current 5A
DC power / Pulse Power 100W / 3KW
SOURCE PERFORMANCE
Voltage setting resolution 18bit
1mV
Output impedance I ≤ 0.3A: 2Ω / I > 0.3A: 0,4Ω
PULSE TIMING  
Rise Time (10% - 90%)
Fall Time (10% - 90%)
20ns ( typ. value)
22ns ( typ. value)
speed mode: fast, no load, 100V step
Pulse timing Pulse width from 200ns to DC (Within Power limits)
Fmax 500kHz
MEASUREMENT PERFORMANCE  
V range 250V/5V
I range 30A/3A/0,3A
V & I ADC resolution 16bit
Noise free resolution (average filter 128 samples, at 0 voltage and current)

3mV/0,25mV

0,3mA/0,13mA/10μA

Settling time 300ns
Bandwidth (greatest range) 10MHz
Output connector 2 BNC

AM3221 Probe +250V +30A

The AM3221 probe is a power probe dedicated to bias the transistor drain, optimized for high power pulsed measurements.

AM3211
PURPOSE GATE
OPERATING RANGE
Switched voltage levels 2
Voltage ±25V
Pulsed current ±1A
DC& RMS Current 300mA
DC power / Pulse Power 3W / 10W Source or Sink
SOURCE PERFORMANCE
Voltage setting resolution 16bit
0,7mV
Output impedance I ≤ 0.1mA: 204Ω / I > 0.1mA: 14.5Ω
PULSE TIMING  

Rise Time (10% - 90%)
Fall Time (10% - 90%)

33ns ( typ. value)
32ns ( typ. value)
speed mode: fast, no load, 5V step

Pulse Timing Pulse width from 200ns to DC (Within Power limits)
Fmax 500kHz
MEASUREMENT PERFORMANCE  
V range 25V
I range 1A/10mA/0,1mA
V & I ADC resolution 16bit
Noise free resolution (average filter 128 samples, at 0 voltage and current)

0,5mV

30μA/3μA/0,3μA

Settling time 300ns
Bandwidth (greatest range) 10MHz
Output connector D-SUB15

 

AM3211 Bipolar Probe +/-25V +/-1A

The AM3211 is a low noise floating pulse generator dedicated to bias the transistor gate, optimized to drive quickly and safely all the transistors (RF Devices, MOSFET).

AM3221
PURPOSE DRAIN
OPERATING RANGE
Switched voltage levels 2
Voltage ±250V
Pulsed current ±30A
DC& RMS Current 5A
DC power / Pulse Power 100W / 3KW
SOURCE PERFORMANCE
Voltage setting resolution 18bit
1mV
Output impedance I ≤ 0.3A: 2Ω / I > 0.3A: 0,4Ω
PULSE TIMING  
Rise Time (10% - 90%)
Fall Time (10% - 90%)
20ns ( typ. value)
22ns ( typ. value)
speed mode: fast, no load, 100V step
Pulse timing Pulse width from 200ns to DC (Within Power limits)
Fmax 500kHz
MEASUREMENT PERFORMANCE  
V range 250V/5V
I range 30A/3A/0,3A
V & I ADC resolution 16bit
Noise free resolution (average filter 128 samples, at 0 voltage and current)

3mV/0,25mV

0,3mA/0,13mA/10μA

Settling time 300ns
Bandwidth (greatest range) 10MHz
Output connector 2 BNC

AM3221 Probe +250V +30A

The AM3221 probe is a power probe dedicated to bias the transistor drain, optimized for high power pulsed measurements.