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GaN Drives Advances in Computer-Aided Design

Dr Christophe Charbonniaud discussing GaN modeling in MW&RF article

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Pulsed IV, Pulsed S-Parameters and Compact Transistor Models

The BILT/IVCAD pulsed characterization system is the first to allow engineers and transistor designers to characterize and model GaN FETs by performing synchronized Pulsed IV and Pulsed S-Parameter measurements and developing Compact Transistor Models from the comfort of their labs.

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IVCAD Outline

IVCAD advanced measurement and modeling software addresses new challenge in modern RF and Microwave industry, at System, Circuit, or Component Levels.

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1000 Volt / 30 Amp Pulser Head

Ideal for High-Voltage Fast-Switching Transistor Characterization. The AM241 Drain probe head is intended for high voltage SiC, JFET, MOSFET, IGBT transistors pulsed measurements.

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