> Post the 7 November 2013
Meet AMCAD at the "Radio Wireless Week" , 19-22 January 2014, Newport Beach, California, USA
> Post the 20 September 2013
AMCAD Agenda at European Microwave Week 2013, Nuremberg
> Post the 10 July 2013
AMCAD will design S-band and X-band high-efficiency Doherty power amplifiers for next generation of satellite telemetry transmitters
With new design kits for Agilent ADS 2009/2011, STAN automation for AWR Microwave Office, give your circuit a check-up and save months in development using STAN tool for linear and non-linear stability analysis of your design.
The BILT/IVCAD pulsed characterization system is the first to allow engineers and transistor designers to characterize and model GaN FETs by performing synchronized Pulsed IV and Pulsed S-Parameter measurements and developing Compact Transistor Models from the comfort of their labs.
This video describes VNA-based hybrid Load-Pull technique and highlights the capabilities of IVCAD to handle such measurements.
Ideal for High-Voltage Fast-Switching Transistor Characterization. The AM241 Drain probe head is intended for high voltage SiC, JFET, MOSFET, IGBT transistors pulsed measurements.