> Post the 16 December 2014
Dr Christophe Charbonniaud discussing GaN modeling in MW&RF article
> Post the 19 September 2014
AMCAD Agenda at European Microwave Week 2014 in Roma
> Post the 6 May 2014
STAN User Group Meeting offers an informal and enlightening session and discussions about IC stability analysis. Whether you are a beginner or an expert in this field, you will find something just for you at the STAN User Group meeting, which is going to be held in Tampa Florida during IMS 2014.
With new design kits for Agilent ADS 2009/2011, STAN automation for AWR Microwave Office, give your circuit a check-up and save months in development using STAN tool for linear and non-linear stability analysis of your design.
The BILT/IVCAD pulsed characterization system is the first to allow engineers and transistor designers to characterize and model GaN FETs by performing synchronized Pulsed IV and Pulsed S-Parameter measurements and developing Compact Transistor Models from the comfort of their labs.
IVCAD advanced measurement and modeling software addresses new challenge in modern RF and Microwave industry, at System, Circuit, or Component Levels.
Ideal for High-Voltage Fast-Switching Transistor Characterization. The AM241 Drain probe head is intended for high voltage SiC, JFET, MOSFET, IGBT transistors pulsed measurements.