MT930C2 is an add-on software module for MT930C Vector-Receiver Load Pull and MT930J Pulsed IV Curves which measures the I-V characteristic of GaN HEMT transistors in pulse mode by considering the “real” state of charge of the traps, i.e., the one imposed by the component’s environment in its final application. The measurement involves applying a RF pre-pulse before each IV measurement point which conditions the charge of the traps at a level determined by the I-V area and is varied throughout the measurement to represent the signal envelope’s evolution. The solution uses vector-receiver load pull measurements to set the impedance states to match the final application and set the load lines appropriately.
Compact ModelingMT930C2 has been developed to create a more accurate compact transistor model and to speed-up the model extraction and validation process. MT930C2 simplifies the trap models development and embeds non-50ohm measurements into the model extraction process.