A Smart Load-Pull Method to Safely Reach Optimal Matching Impedances of Power Transistors, T. Reveyrand, T. Gasseling, D. Barataud et al., Microwave Symposium 2007 IEEE MTT-S International, June 2007, pp.1489-1492
A Novel Load-Pull Setup Allowing the Intermodulation Measurement of Power Transistors under Pulsed DC and Pulsed RF Conditions, H. Bousbia, D. Barataud, G. Neveux et al., 2006 IEEE MTT-S International Microwave Symposium Digest, pp. 1452-1455, June 2006
A transistor measurement setup for microwave high power amplifiers design, J.P. Teyssier, D. Barataud, C. Charbonniaud et al., Asia-Pacific Conference Proceedings, vol.5, 4-7 Dec. 2005
A fully calibrated four channels time domain RF envelope measurement system for the envelope characterization of nonlinear devices in a load-pull environment, F. Macraigne, T. Reveyrand, C. Maziere et al., 2005 European Microwave Conference, vol.2, Oct.2005
Hot small-signal S-parameter measurements of power transistors operating under large-signal conditions in a load-pull environment for the study of nonlinear parametric interactions, T. Gasseling, D. Barataud, S. Mons et al., IEEE Transactions on Microwave Theory and Techniques, vol. 52, Issue 3, March 2004, pp. 805-812
Time-domain pulsed large-signal non-linear characterization of microwave transistors, C. Charbonniaud, J.P. Teyssier, R. Quere, 2003 European Microwave Conference, vol. 1, 7-9 Oct. 2003
A new characterization technique of "Four hot S parameters" for the study of nonlinear parametric behaviors of microwave devices, T. Gasseling, D. Barataud, S. Mons et al., 2003 IEEE MTT-S International Microwave Symposium Digest, vol.3, pp. 1663-1666, June 2003
