Pulsed IV, Pulsed S-Parameters and Compact Transistor Models
The BILT/IVCAD pulsed characterization system is the first to allow engineers and transistor designers to characterize and model GaN FETs by performing synchronized Pulsed IV and Pulsed S-Parameter measurements and developing Compact Transistor Models from the comfort of their labs.
This product feature was published in Microwave Journal’s April 2012 issue.
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