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AMCAD’ original FET model is a measurement-based analytical model developed for the purpose of fitting measured electrical behavior of FETs.

The model equations were developed concurrently with the parameter extraction techniques to ensure the model contains only parameters that are extractable from measured data.

The modelling tool is organized in an extraction flow, following the model extraction steps:

 - Meas. data management
 - Small signal model
 - IV model
 - Non-linear capacitances
 - Thermal model
 - Trapping effects
 - Breakdown phenomena

 

 Users can perform each extraction steps using optimizers and/or tuners inside an easy-to-use tool, and dedicated algorithms allow fast and efficient extraction.

The model includes the following features:
- An accurate electro-thermal drain-source current model including dynamical self-heating of the device
- Few parameters, ensuring easier extraction process
- A charge model that accurately tracks measured capacitance values (one dimension, respecting charge conservation law)
- A breakdown model as a function of both Vgs and Vds
- Extrapolation capabilities from the measurement area used for the model extraction
- Scaling rules can be added